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2N5019_TO-18 Datasheet(PDF) 1 Page - Micross Components |
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2N5019_TO-18 Datasheet(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5019 ZERO OFFSET VOLTAGE LOW ON RESISTANCE rDS(on) ≤ 150Ω ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +200°C Operating Junction Temperature ‐55°C to +200°C Maximum Power Dissipation Continuous Power Dissipation 500mW MAXIMUM CURRENT Gate Current (Note 1) IG = ‐50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V 2N5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐‐ ‐‐ 5 VDS = ‐15V, ID = ‐1µA VDS(on) Drain to Source On Voltage ‐‐ ‐‐ ‐0.5 VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐5 ‐‐ ‐‐ mA VDS = ‐20V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐‐ 2 nA VGS = 15V, VDS = 0V ID(off) Drain Cutoff Current ‐‐ ‐‐ ‐10 VDS = ‐15V, VGS = 12V ‐‐ ‐‐ ‐10 µA VDS = ‐15V, VGS = 7V IDGO Drain Reverse Current ‐‐ ‐‐ ‐2 nA VDG = ‐15V, IS = 0A rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = ‐1mA, VGS = 0V 2N5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 150 Ω ID = 0A, VGS = 0V, f = 1kHz Ciss Input Capacitance ‐‐ ‐‐ 45 pF VDS = ‐15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ ‐‐ 10 VDS = 0V, VGS = 7V, f = 1MHz 2N5019 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 15 ns VGS(L) = 7V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 75 td(off) Turn Off Time 25 tf Turn Off Fall Time 100 SWITCHING TEST CIRCUIT 2N5019 SWITCHING CIRCUIT PARAMETERS VDD ‐6V VGG 8V RL 1.8kΩ RG 390Ω ID(on) ‐3mA The 2N5019 is a single P-Channel JFET switch 2N5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5019 This p-channel analog switch is designed to provide low on-resistance and fast switching. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). 2N5019 Applications: Analog Switches Commutators Choppers 2N5019 Benefits: Low Insertion Loss No offset or error voltage generated by closed switch Purely resistive Micross Components Europe Available Packages: 2N5019 in TO-18 2N5019 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5019 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution TO-18 (Bottom View) |
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