BFP183W_07 datasheet(1/7 Pages) INFINEON

Part #	BFP183W

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2007-04-20

BFP183W

1

2

3

4

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

• f

T = 8 GHz, F = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP183W

RHs

1=E

2=C

3=E

4=B

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

65

mA

Base current

IB

5

Total power dissipation2)

TS ≤ 58 °C

Ptot

450

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point3)

RthJS

≤ 205

K/W

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

3For calculation of RthJA please refer to Application Note Thermal Resistance

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