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BF1005S Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # BF1005S
Description  Silicon N-Channel MOSFET Tetrode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BF1005S Datasheet(HTML) 3 Page - Infineon Technologies AG

  BF1005S_07 Datasheet HTML 1Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 2Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 3Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 4Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 5Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 6Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 7Page - Infineon Technologies AG BF1005S_07 Datasheet HTML 8Page - Infineon Technologies AG  
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2007-04-20
3
BF1005S...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
(verified by random sampling)
Forward transconductance
VDS = 5 V, VG2S = 4.5 V
gfs
26
30
-
mS
Gate1 input capacitance
VDS = 5 V, VG2S = 4 V, f = 1 MHz
Cg1ss
-
2.4
2.7
pF
Output capacitance
VDS = 5 V, VG2S = 4 V, f = 100 MHz
Cdss
-
1.3
-
Power gain (self biased)
VDS = 5 V, VG2S = 4 V, f = 800 MHz
Gp
20
22
-
dB
Noise figure
VDS = 5 V, VG2S = 4 V, f = 800 MHz
F
-
1.6
2.1
dB
Gain control range
VDS = 5 V, VG2S = 4 V ... 0 V, f = 800 MHz
∆G
p
40
50
-


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