BCX41_07 datasheet(2/7 Pages) INFINEON

Part #	BCX41

Description	NPN Silicon AF and Switching Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 7 page

2007-04-20

2

BCX41

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO 125

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0

V(BR)CBO 125

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector-base cutoff current

VCB = 100 V, IE = 0

VCB = 100 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

20

µA

Collector-emitter cutoff current

VCE = 100 V, TA = 85 °C

VCE = 100 V, TA = 125 °C

ICEO

-

10

75

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain1)

IC = 100 µA, VCE = 1 V

IC = 100 mA, VCE = 1 V

IC = 200 mA, VCE = 1 V

hFE

25

63

40

-

Collector-emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

VCEsat

-

0.9

V

Base emitter saturation voltage1)

IC = 300 mA, IB = 30 mA

VBEsat

-

1.4

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

fT

-

100

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

12

-

pF

1Pulse test: t < 300µs; D < 2%

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