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56DN06 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. 56DN06
Description  Netz-Gleichrichterdiode Rectifier Diode
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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56DN06 Datasheet(HTML) 1 Page - Infineon Technologies AG

   
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N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
56DN06
IFBIP D AEC / 2011-02-17, H.Sandmann
A 05/11
1/7
Seite/page
Kenndaten
Elektrische Eigenschaften
Thermische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Tvj = -40°C... Tvj max
VRRM
600 V
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
IFRMSM
10050 A
Dauergrenzstrom
average on-state current
TC = 126 °C
IFAVM
6400 A
Stoßstrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
IFSM
81000
70000
A
A
Grenzlastintegral
I²t-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
I²t
32800
24500
10³A²s
10³A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Tvj = Tvj max , iF = 10 kA
vF
max.
1,15 V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
0,7 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,04 mΩ
Durchlaßkennlinie
2000 A ≤ iF ≤ 32000 A
on-state characteristic
F
F
F
F
i
D
)
1
i
(
ln
C
i
B
A
v
+
+
+
+
=
Tvj = Tvj max
A=
B=
C=
D=
4,617E-01
2,002E-05
7,441E-03
4,190E-03
Sperrstrom
reverse current
Tvj = Tvj max , vR = VRRM
iR
max.
100 mA
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
RthJC
max.
max.
0,0062
0,0055
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Kühlfläche / cooling surface
beidseitig / two-sided
RthCH
max.
0,0025 °C/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj max
180 °C
Betriebstemperatur
operating temperature
Tc op
-40...+180 °C
Lagertemperatur
storage temperature
Tstg
-40...+180 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 2
page 2
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpreßkraft
clamping force
F
40...60 kN
Gewicht
weight
G
typ.
110 g
Schwingfestigkeit
vibration resistance
f = 50 Hz
50 m/s²
prepared by: H.Sandmann
date of publication:
2011-02-17
approved by: M.Leifeld
revision:
3.0


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