NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: XN0031H

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFT50

__

__

__

│

│

│

│

│

│

│

│

│

│

│

│

└

Screening

2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

└

Package

/39: TO-39 /5: TO-5 -4: LCC4

└

Family / Voltage

13 = 800V

14 = 900V

SFT5013-4 & SFT5014-4

SFT5013/5 & SFT5014/5

SFT5013/39 & SFT5014/39

0.5 AMP, 800 – 900 Volts

NPN Transistor

FEATURES:

 BVCER to 900 volts

 Low Saturation Voltage

 Low Leakage at High Temperature

 High Gain, Low Saturation

 200° C Operating, Gold Eutectic Die Attach

 2N5010 thru 2N5012 Also Available, Contact Factory

Maximum Ratings

Symbol

Value

Units

5013

5014

800

900

V

Collector – Base Voltage

5013

5014

800

900

V

Emitter – Base Voltage

5

V

Collector – Emitter Breakdown Voltage

5013

5014

300

400

V

Peak Collector Current

0.5

A

Peak Base Current

250

mA

-4

/39 & /5

1.0

2.0

20

2.0

20

W

W

mW/ºC

W

mW/ºC

Operating and Storage Temperature

-65 to +200

ºC

Thermal Resistance, Junction to Case

-4

/39 & /5

175 / 440

50 (typ 30)

ºC/W

Notes:

4 PIN CLCC (LCC4)

TO-39

TO-5

1/ For ordering information, price, operating curves, and

availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ Unless otherwise specified, maximum ratings/electrical

characteristics at 25°C.

4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%