4Kb 1-Wire EEPROM with

200k Write/Erase Cycles

_______________________________________________________________________________________

3

ELECTRICAL CHARACTERISTICS (continued)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

IO PIN: 1-Wire WRITE

Standard speed

60

120

Write-Zero Low Time

(Notes 2, 16)

Overdrive speed

6

16

μs

Standard speed

5

15

Write-One Low Time

(Notes 2, 16)

Overdrive speed

1

2

μs

IO PIN: 1-Wire READ

Standard speed

5

15 -

Read Low Time

(Notes 2, 17)

Overdrive speed

1

2 -

μs

Standard speed

15

Read Sample Time

(Notes 2, 17)

Overdrive speed

2

μs

EEPROM

Programming Current

(Note 18)

2

mA

Programming Time

(Note 19)

5

ms

At +25°C

200,000

Write/Erase Cycles (Endurance)

(Notes 20, 21)

At +85°C (worst case)

50,000

—

Data Retention (Notes 22, 23, 24)

At +85°C (worst case)

40

Years

Note 1:

Not all parameters are tested at all temperatures.

Note 2:

System requirement.

Note 3:

When operating near the minimum operating voltage (2.8V), a falling edge slew rate of 15V/µs or faster is recommended.

Note 4:

Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system, 1-Wire recovery times,

and current requirements during EEPROM programming. The specified value here applies to systems with only one

device and with the minimum 1-Wire recovery times. For more heavily loaded systems, an active pullup such as that found

in the DS2482-x00 or DS2480B may be required.

Note 5:

Ω resistor is used to pull up the data

Note 6:

Guaranteed by design, characterization, and/or simulation only. Not production tested.

Note 7:

Note 8:

Voltage below which, during a falling edge on IO, a logic 0 is detected.

Note 9:

Note 10: Voltage above which, during a rising edge on IO, a logic 1 is detected.

Note 12: The I-V characteristic is linear for voltages less than +1V.

Note 13: Applies to a single DS24B33 attached to a 1-Wire line.

Note 16:

Note 17:

Note 18: Current drawn from IO during the EEPROM programming interval. The pullup circuit on IO should be such that during the

pad sequence. The interval ends once the device’s self-timed EEPROM programming cycle is complete and the current