IXGH85N30C3 datasheet(1/6 Pages) IXYS

Part #	IXGH85N30C3

Description	GenX3 300V IGBT

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Manufacturer	IXYS [IXYS Corporation]

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GenX3TM 300V IGBT

IXGH85N30C3

(TAB)

High Speed PT IGBTs for

50-150kHz switching

Preliminary Technical Information

V

CES

= 300V

I

C110

= 85A

V

CE(sat)

≤≤≤≤≤ 1.9V

t

fi typ

= 70ns

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

µA, V

GE = 0V

300

V

GE(th)

I

C

= 250

µA, V

CE = VGE

2.5

5.0

V

I

CES

V

CE

= V

CES

30

µA

V

GE = 0V

T

J = 125°C

750

µA

I

GES

V

CE

= 0V, V

GE = ±20V

±100

nA

V

CE(sat)

I

C

= 85A, V

GE = 15V

1.64

1.9

V

T

J = 125°C

1.67

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

300

V

CGR

T

J

= 25

°C to 150°C, R

GE = 1MΩ

300

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C (limited by leads)

75

A

I

C110

T

C = 110°C (chip capability)

85

A

I

CM

T

C = 25°C, 1ms

420

A

I

A

T

C = 25°C

85

A

E

AS

T

C = 25°C

400

mJ

SSOA

V

GE = 15V, TVJ = 125°C, RG = 3.3Ω

I

CM = 170

A

(RBSOA)

Clamped inductive load @

≤ 300V

P

C

T

C = 25°C

333

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum lead temperature for soldering

300

°C

T

SOLD

1.6 mm (0.062 in.) from case for 10s

260

°C

M

d

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

Weight

6g

DS99883A(01-08)

G

C

E

TO-247 AD

(IXGH)

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

Features

High Frequency IGBT

Square RBSOA

High avalanche capability

Drive simplicity with MOS Gate

Turn-On

High current handling capability

Applications

PFC Circuits

PDP Systems

Switched-mode and resonant-mode

converters and inverters

SMPS

AC motor speed control

DC servo and robot drives

DC choppers

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