IXYS reserves the right to change limits, test conditions and dimensions.

IXGH72N60A3

IXGT72N60A3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

48

76

S

C

ies

6600

pF

C

oes

V

360

pF

C

res

80

pF

Q

g

230

nC

Q

ge

I

40

nC

Q

gc

78

nC

t

d(on)

31

ns

t

ri

34

ns

E

on

1.38

mJ

t

d(off)

320

ns

t

fi

250

ns

E

off

3.5

mJ

t

d(on)

29

ns

t

ri

32

ns

E

on

2.6

mJ

t

d(off)

510

ns

t

fi

375

ns

E

off

6.5

mJ

R

thJC

0.23

°C/W

R

thCS

0.15

°C/W

Note 1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

Terminals: 1 - Gate

2 - Drain

1

2

3

TO-268 Outline

Terminals: 1 - Gate

2 - Drain

Inductive load, T

I

V

Inductive load, T

I

V