IXGT60N60C3D1 datasheet(7/7 Pages) IXYS

Part #	IXGT60N60C3D1

Description	GenX3 600V IGBTs with Diode

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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200

600

1000

0

400

800

60

70

80

90

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

040

80

120

160

0.0

0.5

1.0

1.5

2.0

K

f

T

VJ

°C

-di

F/dt

t

s

K/W

0

200

400

600

800

1000

0

5

10

15

20

0.00

0.25

0.50

0.75

1.00

V

FR

di

F/dt

V

200

600

1000

0

400

800

0

5

10

15

20

25

30

100

1000

0

200

400

600

800

1000

01

23

0

10

20

30

40

50

60

I

RM

Q

r

I

F

A

V

F

-di

F/dt

-di

F/dt

A/

µs

A

V

nC

A/

µs

A/

µs

t

rr

ns

t

fr

Z

thJC

A/

µs

DSEP 29-06

T

VJ= 150°C

T

VJ= 100°C

T

VJ= 25°C

T

VJ= 100°C

V

R = 300V

I

F= 60A

I

F= 30A

I

F= 15A

T

VJ= 100°C

V

R = 300V

T

VJ= 100°C

V

R = 300V

I

F= 60A

I

F= 30A

I

F= 15A

Fig. 21 Forward current I

F versus VF

Fig. 22 Reverse recovery charge Q

r

versus -di

F/dt

Fig. 23 Peak reverse current I

RM

versus -di

F/dt

t

fr

V

FR

I

F= 60A

I

F= 30A

I

F= 15A

Q

r

I

RM

Fig. 24 Dynamic parameters Q

r, IRM

versus T

VJ

Fig. 25 Recovery time t

rr versus -diF/dt

Fig. 26 Peak forward voltage V

FR and

t

fr versus diF/dt

Fig. 27 Transient thermal resistance junction to case

T

VJ= 100°C

V

R = 300V

Constants for Z

thJC calculation:

iR

thi (K/W)

t

i (s)

1

0.502

0.0052

2

0.193

0.0003

3

0.205

0.0162

IXGH60N60C3D1

IXGT60N60C3D1

IXYS REF: G_60N60C3(6D)01-15-10-E

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