IXYS reserves the right to change limits, test conditions, and dimensions.

IXGB200N60B3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= 60A, V

95

160

S

C

ies

26

nF

C

oes

V

1260

pF

C

res

97

pF

Q

g(on)

750

nC

Q

ge

I

C

= 100A, V

115

nC

Q

gc

245

nC

t

d(on)

44

ns

t

ri

83

ns

E

on

1.6

mJ

t

d(off)

310

450

ns

t

fi

183

300

ns

E

off

2.9

4.5

mJ

t

d(on)

42

ns

t

ri

80

ns

E

on

2.4

mJ

t

d(off)

430

ns

t

fi

300

ns

E

off

4.2

mJ

R

thJC

0.10

°C/W

R

thCS

0.13

°C/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Note: Bottom heatsink meets

2500Vrms Isolation to the other

Ref: IXYS CO 0128