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DFB2580 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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DFB2580 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com DFB2505 - DFB25100 Rev. A4 1 March 2011 DFB2505 - DFB25100 Glass Passivated Bridge Rectifiers Features • UL certificate # E326243 • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction • Plastic material has Underwriters Laboratory Flammability Classification 94V-0 • Surge overload rating to 350 amperes peak • High case dielectric strength of 2500 VRMS • Isolated voltage from case to lead over 2500 volts Absolute Maximum Ratings* T A = 25°C unless otherwise noted * Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% ** Device mounted on 4" x 6" x 0.25" Al-plate heat sink. *** In development. Please contact Fairchild Semiconductor for more information. Electrical Characteristics T A = 25°C unless otherwise specified * Measured at 1MHz and applied Reverse bias of 4.0V DC. Symbol Parameter Value Units DFB25 05*** DFB25 10*** DFB25 20*** DFB25 40 DFB25 60 DFB25 80*** DFB25 100*** VRRM Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Voltage 35 70 140 280 420 560 700 V VDC Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V I(AV) Maximum Average Forward Rectified Current 25 A IFSM Peak Forward Surge Current (8.3mS Single Half-wave) 350 A RθJC Typical Thermal Resistance** 6 °C/W TJ Operating Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Symbol Parameter Test condition Value Unit VF Maximum Instantaneous Forward Voltage @ 12.5A @ 25A 1.0 1.1 V IR Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA = 25°C @ TA = 125°C 10 500 μA I2t Rating for fusing (t < 8.3mS) 508 A2S Cj Typical Junction Capacitance per leg* 110 pF + ~ ~ - TS-6P |
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