1 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

V

DGR

T

J

= 25

°C to 150°C; R

500

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C32

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

120

A

I

AR

T

C

= 25

°C32

A

E

AS

T

C

= 25

°C

1.5

J

E

AR

T

C

= 25

°C45

mJ

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Weight

6

g

N-Channel Enhancement Mode

High dv/dt, Low t

PLUS 247

Features

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly

• Space savings

• High power density

G = Gate

D = Drain

S = Source

98719A (7/00)

IXFX 32N50

V

DSS

=

500 V

I

D25

=

32 A

R

0.15

W

t

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

500

V

V

DSS

temperature coefficient

0.102

%/K

V

GS(th)

V

2

4

V

V

-0.206

%/K

I

GSS

V

±100 nA

I

DSS

V

T

25

°C

200

mA

V

T

mA

R

DS(on)

V

0.15

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

Preliminary data sheet

IXYS reserves the right to change limits, test conditions, and dimensions.