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IXFK88N30P Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXFK88N30P
Description  Polar HiPerFET Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFK88N30P Datasheet(HTML) 4 Page - IXYS Corporation

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT88N30P IXFH88N30P
IXFK88N30P
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGS - Volts
TJ = 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
160
180
ID - Amperes
TJ = - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.3
0.4
0.50.6
0.70.8
0.91.0
1.11.2
1.31.4
VSD - Volts
TJ = 125ºC
TJ = 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0
20406080
100
120
140
160
180
200
QG - NanoCoulombs
VDS = 150V
I D = 44A
I G = 10mA
Fig. 11. Capacitance
100
1,000
10,000
0
5
10
15
20
25
30
35
40
VDS - Volts
f = 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1
10
100
1000
VDS - Volts
TJ = 150ºC
TC = 25ºC
Single Pulse
25µs
1ms
100µs
RDS(on) Limit
10ms
DC


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