IXFQ60N50P3 datasheet(1/5 Pages) IXYS

Part #	IXFQ60N50P3

Description	Polar3 HiperFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

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DS100311(03/11)

IXFT60N50P3

IXFQ60N50P3

IXFH60N50P3

Polar3TM HiperFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

60

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

150

A

I

A

T

C = 25°C30

A

E

AS

T

C = 25°C1

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

35

V/ns

P

D

T

C = 25°C

1040

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062in.) from Case for 10s

300

°C

T

sold

Plastic Body for 10 seconds

260

°C

M

d

Mounting Torque (TO-247 & TO-3P)

1.13 / 10

Nm/lb.in.

Weight

TO-268

4.0

g

TO-3P

5.5

g

TO-247

6.0

g

V

DSS

= 500V

I

D25

= 60A

R

DS(on) ≤

≤≤≤≤ 100m

Ω

Advance Technical Information

Features

Fast Intrinsic Rectifier

Avalanche Rated

Low R

DS(ON) and QG

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 4mA

3.0

5.0

V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS= 0V

25

μA

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

100 m

Ω

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

TO-3P (IXFQ)

D

G

S

D (Tab)

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