IXFR66N50Q2 datasheet(1/4 Pages) IXYS

Part #	IXFR66N50Q2

Description	HiPerFET Power MOSFET Q2-Class

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS99076A(05/08)

V

DSS

= 500V

I

D25

= 50A

R

DS(on)

≤≤≤≤≤ 85mΩ

Ω

t

rr

≤≤≤≤≤ 250ns

IXFR66N50Q2

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = 33A, Note 1

85 m

Ω

HiPerFETTM

Power MOSFET

Q2-Class

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C50

A

I

DM

T

C = 25°C, pulse width limited by TJM

264

A

I

A

T

C = 25°C66

A

E

AS

T

C = 25°C4

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

500

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum lead temperature for soldering

300

°C

T

SOLD

Plastic body for 10s

260

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

F

C

Mounting force

20..120/4.5..27

N/lb.

Weight

5g

Features

• Double metal process for low gate

resistance

• International standard package

• Epoxy meet UL 94 V-0, flammability

classification

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q

g

Low intrinsic R

g, low trr

G = Gate

D = Drain

S = Source

Isolated Tab

ISOPLUS247 (IXFR)

E153432

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