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IXFN52N90P Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFN52N90P
Description  Polar Power MOSFET HiPerFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN52N90P Datasheet(HTML) 1 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
DS100065(10/08)
V
DSS
= 900V
I
D25
= 43A
R
DS(on)
≤≤≤≤≤ 160mΩ
Ω
Ω
Ω
Ω
t
rr
≤≤≤≤≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
900
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
900
V
V
GSS
Continuous
± 30
V
V
GSM
Transient
± 40
V
I
D25
T
C = 25°C43
A
I
DM
T
C = 25°C, pulse width limited by TJM
104
A
I
A
T
C = 25°C26
A
E
AS
T
C = 25°C2
J
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS,TJ ≤ 150°C
20
V/ns
P
D
T
C = 25°C
890
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
V
ISOL
50/60 Hz, RMS
t = 1min
2500
V~
I
ISOL ≤ 1mA
t = 1s
3000
V~
M
d
Mounting torque
1.5/13
Nm/lb.in.
Terminal connection torque
1.3/11.5
Nm/lb.in.
Weight
30
g
IXFN52N90P
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 3mA
900
V
V
GS(th)
V
DS = VGS, ID = 1mA
3.5
6.5
V
I
GSS
V
GS = ± 30V, VDS = 0V
± 200 nA
I
DSS
V
DS = VDSS
50
μA
V
GS = 0V
T
J = 125°C
4 mA
R
DS(on)
V
GS = 10V, ID = 26A, Note 1
160 m
Ω
G
D
S
S
miniBLOC, SOT-227
E153432
G = Gate
D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
PolarTM Power MOSFET
HiPerFETTM
Preliminary Technical Information
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Avalanche Rated
Low package inductance
Fast intrinsic diode
Advantages
Low gate drive requirement
High power density
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls


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