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IXFN44N100Q3 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFN44N100Q3
Description  HiperFET Power MOSFET Q3-Class
Download  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN44N100Q3 Datasheet(HTML) 1 Page - IXYS Corporation

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Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1000
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
1000
V
V
GSS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C = 25°C
38
A
I
DM
T
C = 25°C, Pulse Width Limited by TJM
110
A
I
A
T
C = 25°C
44
A
E
AS
T
C = 25°C4
J
dv/dt
I
S
≤ I
DM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
P
D
T
C = 25°C
960
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
V
ISOL
50/60 Hz, RMS, t = 1minute
2500
V~
I
ISOL ≤ 1mA,
t = 1s
3000
V~
M
d
Mounting Torque for Base Plate
1.5/13
Nm/lb.in.
Terminal Connection Torque
1.3/11.5
Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 3mA
1000
V
V
GS(th)
V
DS = VGS, ID = 8mA
3.5
6.5
V
I
GSS
V
GS = ±30V, VDS = 0V
±200 nA
I
DSS
V
DS = VDSS, VGS = 0V
50
μA
T
J = 125°C
3 mA
R
DS(on)
V
GS = 10V, ID = 22A, Note 1
220 m
Ω
HiperFETTM
Power MOSFET
Q3-Class
IXFN44N100Q3
V
DSS
=
1000V
I
D25
=
38A
R
DS(on)
≤≤≤≤
220m
Ω
Ω
Ω
Ω
Ω
t
rr
≤≤≤≤≤
300ns
DS100306(03/11)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
Advance Technical Information
miniBLOC
E153432
G
D
S
S
G = Gate
D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.


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