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IXFX74N50P2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFX74N50P2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2010 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 500 V V GSS Continuous ± 30 V V GSM Transient ± 40 V I D25 T C = 25°C 74 A I DM T C = 25°C, Pulse Width Limited by TJM 185 A I A T C = 25°C74 A E AS T C = 25°C3 J P D T C = 25°C 1400 W dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 30 V/ns T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 1mA 500 V V GS(th) V DS = VGS, ID = 4mA 3.0 5.0 V I GSS V GS = ± 30V, VDS = 0V ± 100 nA I DSS V DS = VDSS, VGS= 0V 10 μA T J = 125°C 1.5 mA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 77 m Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK74N50P2 IXFX74N50P2 V DSS = 500V I D25 = 74A R DS(on) ≤ ≤≤≤≤ 77m Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 250ns DS100252(03/10) Advance Technical Information PolarP2TM HiPerFETTM Power MOSFET Features International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low Q G and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications G = Gate D = Drain S = Source Tab = Drain PLUS247 (IXFX) Tab G D S TO-264 (IXFK) S G D Tab |
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