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IXFH12N80P Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFH12N80P Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS reserves the right to change limits, test conditions, and dimensions. IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS = 20 V; I D = 0.5 ID25, Note 1 8 14 S C iss 2800 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 210 pF C rss 19 pF t d(on) 23 ns t r V GS = 10 V, V DS = 0.5 VDSS, ID = ID25 26 ns t d(off) R G = 5 Ω (External) 70 ns t f 25 ns Q g(on) 51 nC Q gs V GS = 10 V, V DS = 0.5 VDSS, ID = 0.5 ID25 13 nC Q gd 19 nC R thJC 0.35 °C/W R thCS (TO-247 & TO-3P) 0.21 °C/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. I S V GS = 0 V 12 A I SM Repetitive 36 A V SD I F = IS, VGS = 0 V, Note 1 1.5 V t rr I S = 12 A, VGS = 0 V 200 250 ns Q rm -di/dt = 100 A/ μs, V R = 100 V 0.8 μC I rm 4 Α Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P TO-247 (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain TO-3P (IXFQ) Outline |
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