IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH12N80P IXFQ12N80P

IXFV12N80P IXFV12N80PS

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 20 V; I

8

14

S

C

iss

2800

pF

C

oss

V

GS

= 0 V, V

210

pF

C

rss

19

pF

t

d(on)

23

ns

t

r

V

GS

= 10 V, V

26

ns

t

d(off)

R

G

= 5

Ω (External)

70

ns

t

f

25

ns

Q

g(on)

51

nC

Q

gs

V

GS

= 10 V, V

13

nC

Q

gd

19

nC

R

thJC

0.35

°C/W

R

thCS

(TO-247 & TO-3P)

0.21

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

12

A

I

SM

Repetitive

36

A

V

SD

I

1.5

V

t

rr

I

200

250

ns

Q

rm

-di/dt = 100 A/

μs, V

0.8

μC

I

rm

4

Α

Note 1: Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-247 (IXFH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

TO-3P (IXFQ) Outline