IXFC14N80P datasheet(1/4 Pages) IXYS

Part #	IXFC14N80P

Description	PolarHV HiPerFET Power MOSFET ISOPLUS 220

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C8

A

I

DM

T

C = 25°C, pulse width limited by TJM

40

A

I

AR

T

C = 25°C7

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

1.2

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 5 Ω

P

D

T

C = 25°C

130

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS, t = 1, leads-to-tab

2500

V~

F

C

Mounting Force

11..65/2.5..15

N/lb

Weight

2g

G = Gate

D = Drain

S = Source

DS99594E(07/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

800

V

GS(th)

V

DS

= V

GS, ID = 4 mA

3.0

5.5

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 7 A

770

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

V

DSS

=

800

V

I

D25

=

8

A

R

DS(on) ≤

≤≤≤≤ 770 mΩ

Ω

trr

≤≤≤≤≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

ISOPLUS220TM (IXFC)

E153432

G

D

S

(Isolated Tab)

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<30pF)

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Advantages

Easy assembly

Space savings

High power density

IXFC 14N80P

PolarHVTM HiPerFET

Power MOSFET

ISOPLUS 220TM

(Electrically Isolated Tab)

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