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MTTFTables (TBD)

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

deg Celsius

deg Celsius

deg Celsius

FITs

E+

E+

E+

MTTF Hours

E+

E+

E+

Rth

C/W

C/W

C/W

Bias Conditions: Vd1=Vd2=4.0V, Id1=160 mA, Id2=145 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V,

Id1=160mA and Id2=145mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or

below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. It is also recommended to use active

biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the

supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational

amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain

correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon

diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying

the positive drain supply.

App Note [2] Bias Arrangement -

For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass

capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if

gate or drains are tied together) of DC bias pads.

For Individual Stage Bias -- Each DC pad (Vd1,2 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as

possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

32.0-45.0 GHz GaAs MMIC

Transmitter

Typical Application

Mimix Broadband's 32.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation

schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 32.0-45.0 GHz.

Mixer

Mimix Broadband MMIC-based 32.0-45.0 GHz Receiver Block Diagram

(Changing LO and IF frequencies as required allows design to operate as high as 45 GHz)

RF OUT

37.0-39.5 GHz

XU1004-BD

XP1005-BD

Coupler

IF In

2 GHz

LO(+2.0dBm)

17.5-18.75 GHz (USB Operation)

19.5-20.75 GHz (LSB Operation)

Buffer

X2

X

U1004-BD

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2008 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

October 2008 - Rev 16-Oct-08