11.0-17.0 GHz GaAs MMIC

Receiver

Page 5 of 8

October 2008 - Rev 13-Oct-08

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2008 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

R1007-BD

App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1=4.0V with Id1=80mA and

Vd3=4.0V with Id3=100mA. Additionally, a mixer bias is also required with Vg4=-0.5V. Adjusting Vg4 above or below this value can adversely

affect conversion gain, image rejection and intercept point performance. It is also recommended to use active biasing to keep the currents

constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the

power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in

series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain

voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage.

Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement -

For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass

capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if

gate or drains are tied together) of DC bias pads.

For Individual Stage Bias -- Each DC pad (Vd1,3 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as

possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

Typical Application

Mimix Broadband's 11.0-17.0 GHz GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to

128 QAM. The receiver can be used in upper and lower sideband applications from 11.0-17.0 GHz.

IR Mixer

LNA

Mimix Broadband MMIC-based 11.0-17.0 GHz Receiver Block Diagram

RF IN

11.0-17.0 GHz

XR1007-BD

BPF

Coupler

IF Out

2 GHz

LO(+3.0dBm)

9.0-15.0 GHz (USB Operation)

13.0-19.0 GHz (LSB Operation)

AGC Control

Buffer

MTTF

Bias Conditions: Vd1=4.0V, Id1=80mA, Vd3=4.0V, Id3=100 mA

XR1007, MTTF (yrs) vs. Backplate Temperature (°C)

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

55

65

75

85

95

Temperature (°C)

MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.