IXFP16N50P datasheet(1/4 Pages) IXYS

Part #	IXFP16N50P

Description	PolarHV HiperFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

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N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

V

DSS

= 500V

I

D25

= 16A

R

DS(on) ≤

≤≤≤≤ 400m

Ω

t

rr

≤≤≤≤≤ 200ns

DS99357F(05/09)

IXFA16N50P

IXFP16N50P

IXFH16N50P

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C R

GS = 1MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C16

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

35

A

I

A

T

C = 25°C16

A

E

AS

T

C = 25°C

750

mJ

dV/dt

I

S ≤ IDM, VDD ≤ VDSS ,TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10 Seconds

260

°C

M

d

Mounting Torque

(TO-220 & TO-247)

1.13 / 10

Nmlb.in.

F

C

Mounting Force

(TO-263)

10..65 / 2.2..14.6

N/lb.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

500

V

GS(th)

V

DS = VGS, ID = 2.5mA

3.0

5.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 100 nA

I

DSS

V

DS = VDSS, VGS= 0V

15

μA

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

400 m

Ω

PolarHVTM HiperFET

Power MOSFET

(TAB)

TO-263

G

S

(TAB)

TO-220

D

G

S

G = Gate

D

= Drain

S = Source

TAB = Drain

TO-247

(TAB)

G

D

S

Features

International Standard Packages

Avalanche Rated

Fast Intrinsic Diode

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

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