IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA7N100P

IXFP7N100P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

3.6

6.0

S

R

Gi

Gate Input Resistance

1.8

Ω

C

iss

2590

pF

C

oss

V

158

pF

C

rss

26

pF

t

d(on)

25

ns

t

r

49

ns

t

d(off)

42

ns

t

f

44

ns

Q

g(on)

47

nC

Q

gs

V

21

nC

Q

gd

21

nC

R

thJC

0.42

°C/W

R

thCS

TO-220

0.50

°C/W

Note 1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

7

A

I

SM

Repetitive, pulse width limited by T

JM

28

A

V

SD

I

1.3

V

t

rr

300

ns

Q

RM

0.4

μC

I

RM

4.0

A

I

V

TO-220 (IXFP) Outline

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-263 (IXFA) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom

Side