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FMM60-02TF Datasheet(PDF) 1 Page - IXYS Corporation

Part # FMM60-02TF
Description  Trench Gate HiperFET N-Channel Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

FMM60-02TF Datasheet(HTML) 1 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
Trench Gate HiperFET
N-Channel Power MOSFET
Phase Leg Topology
DS100048(09/08)
Symbol
Test Conditions
Characteristic Values
Min.
Typ.
Max.
C
P
Coupling capacitance between shorted
40
pF
pins and mounting tab in the case
d
S ,dA
pin - pin
1.7
mm
d
S ,dA
pin - backside metal
5.5
mm
Weight
9
g
FMM60-02TF
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
200
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
200
V
V
GSM
Transient
± 30
V
I
D25
T
C = 25°C
33
A
I
DM
T
C = 25°C, pulse width limited by TJM
150
A
I
A
T
C = 25°C
5
A
E
AS
T
C = 25°C
1
J
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS,TJ ≤ 150°C
10
V/ns
P
D
T
C = 25°C
125
W
Advance Technical Information
Symbol
Test Conditions
Maximum Ratings
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
V
ISOLD
50/60H
Z, RMS, t = 1min, leads-to-tab
2500
~V
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10s
260
°C
F
C
Mounting force
20..120 / 4.5..27
N/lb.
V
DSS
= 200V
I
D25
= 33A
R
DS(on)
≤≤≤≤ 40mΩ
Ω
Ω
Ω
Ω
t
rr(typ)
= 82ns
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low Q
G
Low Drain-to-Tab capacitance
Low package inductance
Advantages
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
Applications
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
T2
3
5
4
1
2
T1
3
5
4
1
2
ISOPLUS i4-PakTM
1
5
Isolated Tab


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