IXFN200N10P datasheet(1/5 Pages) IXYS

Part #	IXFN200N10P

Description	Polar HiPerFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C

100

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

100

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

200

A

I

D(RMS)

External lead current limit

100

A

I

DM

T

C = 25°C, pulse width limited by TJM

400

A

I

AR

T

C = 25°C60

A

E

AR

T

C = 25°C

100

mJ

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 4 Ω

P

D

T

C = 25°C

680

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS,

T = 1 min

2500

V~

I

ISOL ≤ 1 mA,

T = 1 s

3000

V~

M

d

Mounting torque, Terminal connection torque

1.5/13

lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

100

V

GS(th)

V

DS

= V

GS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±20 V, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS, VGS = 0 V

25

μA

T

J = 150°C

500

μA

T

J = 175°C

2.5

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

7.5

m

Ω

V

GS = 15 V, ID = 400A

5.5

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

DS99239E(03/06)

PolarTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

V

DSS

= 100 V

I

D25

= 200 A

R

DS(on) ≤

≤≤≤≤ 7.5 mΩ

Ω

t

rr

≤≤≤≤≤ 150 ns

IXFN 200N10P

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

• International standard package

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

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