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IXFN82N60P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN82N60P Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 5 page © 2006 IXYS All rights reserved DS99559E(01/06) PolarHVTM HiPerFET Power MOSFET V DSS = 600 V I D25 =82 A R DS(on) ≤≤≤≤≤ 75 mΩ Ω Ω Ω Ω t rr ≤≤≤≤≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Characteristic Values (T J = 25° C, unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0 V, ID = 3 mA 600 V V GS(th) V DS = VGS, ID = 8 mA 3.0 5.0 V I GSS V GS = ±30 VDC, VDS = 0 ±200 nA I DSS V DS = VDSS 25 µA V GS = 0 V T J = 125° C 1000 µA R DS(on) V GS = 10 V, ID = IT, Note 1 75 m Ω Symbol Test Conditions Maximum Ratings V DSS T J = 25° C to 150° C 600 V V DGR T J = 25° C to 150° C; RGS = 1 MΩ 600 V V GSS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25° C72 A I DM T C = 25° C, pulse width limited by TJM 200 A I AR T C = 25° C82 A E AR T C = 25° C 100 mJ E AS T C = 25° C5 J dv/dt I S ≤I DM, di/dt ≤100 A/µs, VDD ≤VDSS, 20 V/ns T J ≤150° C, RG = 2 Ω P D T C = 25° C 1040 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C V ISOL 50/60 Hz, RMS, T = 1 min 2500 V~ I ISOL ≤1 mA, T = 1 s 3000 V~ M d Mounting torque, Terminal connection torque 1.5/13 lb.in. Weight 30 g IXFN 82N60P G D S S miniBLOC, SOT-227 B (IXFN) E153432 G = Gate D = Drain S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low R DS (on) HDMOS TM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density |
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