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IXFN48N50Q Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFN48N50Q Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXFN 44N50Q IXFN 48N50Q IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 20 V; I D = 0.5 • ID25, pulse test 30 42 S C iss 7000 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 960 pF C rss 230 pF t d(on) 33 ns t r V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 • ID25 22 ns t d(off) R G = 4.7 Ω (External), 75 ns t f 10 ns Q g(on) 190 nC Q gs V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 • ID25 40 nC Q gd 86 nC R thJC 0.26 K/W R thCK 0.05 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = 0 V 48 A I SM Repetitive; pulse width limited by T JM 192 A V SD I F = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr 250 ns Q RM I F = 25A, -di/dt = 100 A/µs, VR = 100 V 1.0 µC I RM 10 A miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 |
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