IXFK120N25P

IXFX120N25P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

45

70

S

C

iss

8700

nF

C

oss

V

1300

pF

C

rss

240

pF

t

d(on)

30

ns

t

r

33

ns

t

d(off)

130

ns

t

f

33

ns

Q

g(on)

185

nC

Q

gs

V

50

nC

Q

gd

80

nC

R

thJC

0.18

°C/W

R

thCS

0.15

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

120

A

I

SM

Repetitive, Pulse Width Limited by T

JM

300

A

V

SD

I

1.5

V

t

rr

200 nS

Q

RM

0.8

μC

I

RM

8.0

A

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse Test, t

≤ 300μs; Duty Cycle, d ≤ 2%.

Resistive Switching Times

V

R

I

V

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

TO-264 (IXFK) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190

.205

A

1

2.29

2.54

.090

.100

A

2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b

1

1.91

2.13

.075

.084

b

2

2.92

3.12

.115

.123

C

0.61

0.80

.024

.031

D

20.80 21.34

.819

.840

E

15.75 16.13

.620

.635

e

5.45 BSC

.215 BSC

L

19.81 20.32

.780

.800

L1

3.81

4.32

.150

.170

Q

5.59

6.20

.220 0.244

R

4.32

4.83

.170

.190