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FS16VS-9 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. FS16VS-9
Description  HIGH-SPEED SWITCHING USE
Download  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS16VS-9 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

  FS16VS-9 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor FS16VS-9 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor FS16VS-9 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor FS16VS-9 Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16VS-9
HIGH-SPEED SWITCHING USE
102
7
5
3
2
100
100
23
5 7 101
101
7
5
3
2
23
5 7 102
TC = 25°C
VDS = 10V
Pulse Test
125°C
75°C
104
7
5
3
2
103
7
5
3
2
102
7
5
3
2
101
35 7 100 23 5 7 101 2
2
33
57 102
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
20
16
12
8
4
0
0
4
8
12
16
20
ID = 25A
TC = 25°C
Pulse Test
16A
8A
40
32
24
16
8
0
0
4
8
12
16
20
TC = 25°C
VDS = 50V
Pulse Test
103
7
5
3
2
101
100
23
5 7 101
102
7
5
3
2
23
5 7 102
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50
tf
td(off)
tr
td(on)
0
23
10–1
57 100 23 5 7 101 23 5 7 102
1.0
0.8
0.6
0.4
0.2
TC = 25°C
Pulse Test
VGS = 10V
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)


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