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FS16VS-9 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. FS16VS-9
Description  HIGH-SPEED SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS16VS-9 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16VS-9
HIGH-SPEED SWITCHING USE
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
VGS = 0V
ID = 1mA
5.0
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
VDS = 10V
ID = 1mA
100
7
5
3
2
10–1
–50
101
7
5
3
2
0
50
100
150
VGS = 10V
ID = 1/2ID
Pulse Test
20
16
12
8
4
0
0
20406080
100
VDS = 100V
400V
Tch = 25°C
ID =16A
200V
40
32
24
16
8
0
0
0.8
1.6
2.4
3.2
4.0
TC = 125°C
75°C
25°C
VGS = 0V
Pulse Test
10–4
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
23 57
23 57
23 57
23 57100 23 57101 23 57102
10–3
10–2
10–1
10–2
PDM
tw
D=
T
tw
T
D=1
0.5
0.2
0.1
Single Pulse
0.05
0.02
0.01
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Qg (nC)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE VSD (V)
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH tw (s)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (°C)


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