IXFH26N55Q datasheet(1/2 Pages) IXYS

Part #	IXFH26N55Q

Description	HiPerFET Power MOSFETs Q-Class

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS99001(01/03)

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

550

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

550

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C26

A

I

DM

T

C = 25°C, pulse width limited by TJM

104

A

I

AR

T

C = 25°C26

A

E

AR

T

C = 25°C

50

mJ

E

AS

2.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

20

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

375

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, High dv/dt

Features

IXYS advanced low Q

g process

Low gate charge and capacitances

- easier to drive

- faster switching

International standard packages

Low R

DS (on)

Rated for unclamped Inductive load

switching (UIS) rated

Molding epoxies meet UL 94 V-0

flammability classification

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250 µA

550

V

GS(th)

V

DS = VGS, ID = 4 mA

2.5

4.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J

= 25

°C25

µA

V

GS = 0 V

T

J

= 125

°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

0.23

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

TO-247 AD (IXFH)

G = Gate

D

= Drain

S = Source TAB = Drain

HiPerFETTM

Power MOSFETs

Q-Class

TO-268 (D3) ( IXFT)

(TAB)

G

S

V

DSS

= 550 V

I

D25

= 26 A

R

DS(on)

= 0.23

Ω

t

rr ≤

≤≤≤≤ 250 ns

IXFH 26N55Q

IXFT 26N55Q

(TAB)

Advanced Technical Information

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