1 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

V

DGR

T

J

= 25

°C to 150°C; R

900

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C12

A

I

DM

T

C

= 25

°C,

48

A

pulse width limited by T

JM

I

AR

T

C

= 25

°C12

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

£ I

5

V/ns

T

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-247 AD

6

g

TO-268

4

g

N-Channel Enhancement Mode

Avalanche Rated

Low Q

Features

• IXYS advanced low Q

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low R

DS (on)

• Unclamped Inductive Switching (UIS)

rated

• Molding epoxies meet UL94V-0

flammabilityclassification

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

900

V

V

GS(th)

V

DS

= V

2.5

5.5

V

I

GSS

V

±100

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

mA

V

T

mA

R

DS(on)

V

0.9

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

98572 (11/98)

TO-247 AD (IXFH)

G = Gate

D

= Drain

S = Source

TAB = Drain

Power MOSFETs

Q Class

TO-268 (D3) ( IXFT)

G

S

Preliminary data sheet

V

DSS

= 900 V

I

D25

=

12 A

R

DS(on)

=

0.9

W

t

IXFH 12N90Q

IXFT 12N90Q

IXYS reserves the right to change limits, test conditions, and dimensions.