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5302G-TM3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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5302G-TM3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 5302 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R213-020.A ELECTRICAL CHARACTERISTICS (Ta = 25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IE=0 (Note) 400 V Collector-Base Breakdown Voltage BVCBO IC=1mA, IB=0 800 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 10 V Collector Cutoff Current ICBO VCB=800V, IE=0 1 μA Emitter Cutoff Current IEBO VEB=9V, IC=0 1 μA ON CHARACTERISTICS hFE1 VCE=5V, IC=10mA 10 hFE2 VCE=5V, IC=400mA 10 30 DC Current Gain hFE3 VCE=5V, IC=1A 5 VCE(SAT1) IC=0.5A, IB=0.1A (Note) 0.5 Collector-Emitter Saturation Voltage VCE(SAT2) IC=1A, IB=0.25A (Note) 1.1 1.5 V VBE(SAT1) IC=0.5A, IB=0.1A (Note) 1.1 Base-Emitter Saturation Voltage VBE(SAT2) IC=1A, IB=0.25A (Note) 1.2 V SWITCHING CHARACTERISTICS Turn On Time tON 0.15 0.3 μS Fall Time tF 0.2 0.4 μS Storage Time tSTG VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS Duty Cycle<1% 0.5 0.9 μS Note: Pulsed duration = 300μS, Duty cycle≤2% |
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