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6N90G-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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6N90G-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N90 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-492.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 6.2 A Drain Current Pulsed (Note 1) IDM 24 A Single Pulsed (Note 2) EAS 650 mJ Avalanche Energy Repetitive (Note 1) EAR 16.7 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 167 W Power Dissipation TO-220F/TO220F1 PD 56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Drain current limited by maximum junction temperature. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 °C/W Junction to Ambient TO-220F/TO220F1 θJA 62.5 °C/W TO-220 0.75 °C/W Junction to Case TO-220F/TO220F1 θJC 2.25 °C/W |
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