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5N80L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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5N80L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 5N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-483.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VGS=0 VDS 800 V Gate-Source Voltage VGS ±30 V Drain-Gate Voltage RGS=20kΩ VDGR 800 V Continuous ID 5.5 A Drain Current (Continuous) Pulsed (Note 2) IDM 20 A Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ TO-220 125 W Power Dissipation TO-220F PD 40 W TO-220 1 Derating Factor TO-220F 0.32 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -65~150 °C Notes : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 Junction to Ambient TO-220F θJA 62.5 °C/W TO-220 1 Junction to Case TO-220F θJC 3.12 °C/W |
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