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4N60G-X-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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4N60G-X-TF1-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page 4N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-061,N ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 35 ns Turn-On Rise Time tR 45 100 ns Turn-Off Delay Time tD(OFF) 25 60 ns Turn-Off Fall Time tF VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) 35 80 ns Total Gate Charge QG 15 20 nC Gate-Source Charge QGS 3.4 nC Gate-Drain Charge QGD VDS= 480V,ID= 4.0A, VGS= 10 V (Note 1, 2) 7.1 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Reverse Recovery Time tRR 250 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 4.4 A, dIF/dt = 100 A/μs (Note 1) 1.5 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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