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3N60G-X-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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3N60G-X-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 3N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-110,F ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 3N60-A 600 V Drain-Source Voltage 3N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 1) IDM 12 A Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy Repetitive (Note 1) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 75 TO-220F/TO-220F1 34 Power Dissipation TO-251/TO-252 PD 50 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62.5 TO-220F/TO-220F1 62.5 Junction-to-Ambient TO-251/TO-252 θJA 110 °C/W TO-220 1.67 TO-220F/TO-220F1 3.68 Junction-to-Case TO-251/TO-252 θJC 2.5 °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 3N60-A 600 V Drain-Source Breakdown Voltage 3N60-B BVDSS VGS = 0 V, ID = 250 μA 650 V Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250 μA, Referenced to 25°C 0.6 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 1.5A 2.8 3.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 350 450 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0 V, f = 1MHz 5.5 7.5 pF |
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