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2SB824L-X-AB3-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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2SB824L-X-AB3-R Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page  2SB824 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R208-042.B TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current Collector Current, -IC (A) 0.01 0.1 10 7 1000 5 3 2 100 7 5 3 2 23 5 2 3 5 1.0 10 23 5 2 VCE=-2V Ta=80℃ 25℃ -20℃ Collector-Emitter Saturation Voltage vs. Collector Current Collector Current, -IC (A) 0.1 0.01 10 5 2 0.1 5 3 2 2 35 23 5 1.0 10 2 35 2 IC/IB=10 Ta =8 0 25℃ -20℃ 5 3 2 1.0 3 Collector-Emitter Saturation Voltage vs. Collector Current Collector Current, -IC (A) 0.1 0.01 10 5 2 0.1 5 3 2 23 5 2 3 5 1.0 10 23 5 2 IC/IB=20 Ta =8 0 25℃ -20℃ 5 3 2 1.0 3 Base-Emitter Saturation Voltage vs. Collector Current Collector Current, -IC (A) 0.1 10 5 2 1.0 5 3 2 23 5 2 3 5 1.0 10 23 5 2 IC/IB=10 3 7 7 IC/IB=20 |
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