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AM42-0007_V8 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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AM42-0007_V8 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 4 page 2 GaAs MMIC VSAT Power Amplifier, 2.0 W 14.0 - 14.5 GHz Rev. V8 AM42-0007 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum VDD 12 Volts VGG -10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C IDS 2100 mA 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM Technology does not recommend sustained operation near these survivability limits. 3. Case Temperature (TC) = +25°C. Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < 0 dBm dB 19 22 — Input VSWR PIN < 0 dBm Ratio — 2.5:1 2.7:1 Output VSWR PIN < 0 dBm Ratio — 2.7:1 — Saturated Output Power PIN = +14 dBm dBm — 33 — Output Power at P1dB — dBm 31 32 — Output IP3 Two +24 dB, output tones @ 1 MHz spacing dBm — 41 — Power Added Efficiency PIN = +14 dBm % — 22 — Bias Current IDD (No RF) IGG (No RF) mA mA — — 850 18 — 25 Thermal Resistance 25°C Heat Sink °C/W — 9.5 — Detector Output Voltage RL = 10 K Ω, POUT = +31dBm V — +3.5 — Typical Bias Configuration4,5,6,7,8 4. Nominal bias is obtained by first connecting –5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence. 5. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0007. VDD 6 3.3 µF RF Out 8 RF In 3 0.01 µF VGG 4 GND 1,2,5,9,10 0.01 µF AM42-0007 VDET 7 10 K Ω |
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