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LE28F4001R-20 Datasheet(PDF) 3 Page - Sanyo Semicon Device

Part # LE28F4001R-20
Description  4 MEG (524288 words x 8 bits) Flash Memory
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE28F4001R-20 Datasheet(HTML) 3 Page - Sanyo Semicon Device

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TSOP40 Standard
TSOP40 Reversed
Pin Functions
Function Logic
Command Settings
No. 5239-3/14
LE28F4001M, T, R-15/20
Symbol
Pin
Functions
A18 to A0
Address input
Supply the memory address to these pins.
The address is latched internally during a write cycle.
These pins output data during a read cycle and input data during a write cycle.
DQ7 to DQ0
Data input and output
Data is latched internally during a write cycle.
Outputs go to the high-impedance state when either OE or CE is high.
CE
Chip enable
The device is active when CE is low.
When CE is high, the device becomes unselected and goes to the standby state.
OE
Output enable
Makes the data output buffers active.
OE is a low-active input.
WE
Write enable
Makes the write operation active.
WE is a low-active input.
VCC
Power supply
Apply 5 V (±10%) to this pin.
VSS
Ground
N.C.
No connection
These pins must be left open.
Mode
CE
OE
WE
A18 to A0
DQ7 to DQ0
Read
VIL
VIL
VIH
AIN
DOUT
Write
VIL
VIH
VIL
AIN
DIN
Standby or write inhibit
VIH
X
X
X
High-Z
Write inhibit
X
VIL
X
X
High-Z/DOUT
X
X
VIH
X
High-Z/DOUT
A18 to A10 = VIL, A8 to A1 = VIL,
Manufacturer code (BF)
Product identification
VIL
VIL
VIH
A9 = 12 V, A0 = VIL
A18 to A10 = VIL, A8 to A1 = VIL
Device code (04)
A9 = 12 V, A0 = VIH
Command
Request
Setup command cycle
Execute command cycle
SDP
cycle
Operation
Address
Data
Operation
Address
Data
Sector erase
2
Write
X
20H
Write
SA
D0H
N
Byte program
2
Write
X
10H
Write
PA
PD
N
Reset
1
Write
X
FFH
Y
Read ID
3
Write
X
90H
Read
(7)
(7)
Y
Software data unprotect
7
See Figure 9.
Software data protect
7
See Figure 10.


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