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K6R4008C1D Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K6R4008C1D
Description  512Kx8 Bit High Speed Static RAM(5.0V Operating)
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R4008C1D Datasheet(HTML) 1 Page - Samsung semiconductor

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K6R4008C1D
CMOS SRAM
PRELIMINARY
Rev. 2.0
- 1 -
July 2004
Document Title
512Kx8 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
RevNo.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 1.0
Rev. 2.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
1. Add the Lead Free Package type.
Item
Previous
Current
ICC(Commercial)
10ns
90mA
65mA
12ns
80mA
55mA
15ns
70mA
45mA
ICC(Industrial)
10ns
115mA
85mA
12ns
100mA
75mA
15ns
85mA
65mA
ISB
30mA
20mA
ISB1(Normal)
10mA
5mA
Item
Previous
Current
ICC(Industrial)
10ns
85mA
75mA
12ns
75mA
65mA
Draft Data
September. 7. 2001
November, 3. 2001
November, 23. 2001
December, 18. 2001
July, 09, 2002
July. 26, 2004


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