K6R4004C1D-JC0810 datasheet(4/9 Pages) SAMSUNG

Part #	K6R4004C1D-JC0810

Description	1Mx4 Bit High Speed Static RAM(5.0V Operating)

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Manufacturer	SAMSUNG [Samsung semiconductor]

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K6R4004C1D

CMOS SRAM

PRELIMINARY

Rev. 2.0

- 4 -

July 2004

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

Voltage on Any Pin Relative to VSS

VIN, VOUT

-0.5 to VCC+0.5

V

Voltage on VCC Supply Relative to VSS

VCC

-0.5 to 7.0

V

Power Dissipation

PD

1.0

W

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature

Commercial

TA

0 to 70

°C

Industrial

TA

-40 to 85

°C

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)

*

The above parameters are also guaranteed at industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width

≤ 8ns) for I ≤ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

000

V

Input High Voltage

VIH

2.2

-

VCC+0.5**

V

Input Low Voltage

VIL

-0.5*

-

0.8

V

CAPACITANCE*(TA=25°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

TYP

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

Input Capacitance

CIN

VIN=0V

-6

pF

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

ILI

VIN=VSS to VCC

-2

2

µA

Output Leakage Current

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

Com.

10ns

-

65

mA

Ind.

10ns

-

75

Standby Current

ISB

Min. Cycle, CS=VIH

-20

mA

ISB1

f=0MHz, CS

≥VCC-0.2V,

VIN

≥VCC-0.2V or VIN≤0.2V

-5

Output Low Voltage Level

VOL

IOL=8mA

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

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