Electronic Components Datasheet Search |
|
K5N1229ACD-BQ12 Datasheet(PDF) 97 Page - Samsung semiconductor |
|
K5N1229ACD-BQ12 Datasheet(HTML) 97 Page - Samsung semiconductor |
97 / 128 page Figure 7. Register READ, Synchronous Mode Followed by READ ARRAY Operation - 97 - K5N1229ACD-BQ12 datasheet MCP Memory Rev. 1.0 NOTE : 1) Non-default BCR settings for synchronous mode register READ followed by READ ARRAY operation: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. 2) A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR. 3) CS must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—additional WAIT cycles caused by refresh collisions require a corresponding number of additional CS LOW cycles. CRE ADV CS OE LB/UB A/DQ[15:0] WAIT tHD tSP tHD tCSP tABA tCBPH3 tHZ tOHZ High-Z CLK High-Z Don’t Care Undefined CR ADDRESS DATA VALID Valid ADDRESS tSP tBOE tOLZ tACLK tKW tHD tSP tKOH Latch Control Register Address A[22:16] ADDRESS ADDRESS tHD tSP A[19:18] ADDRESS ADDRESS (Except A[19:18]) |
Similar Part No. - K5N1229ACD-BQ12 |
|
Similar Description - K5N1229ACD-BQ12 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |