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K4B4G0846B-MCF7 Datasheet(PDF) 11 Page - Samsung semiconductor

Part # K4B4G0846B-MCF7
Description  DDP 4Gb B-die DDR3 SDRAM Specification
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4B4G0846B-MCF7 Datasheet(HTML) 11 Page - Samsung semiconductor

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Rev. 1.0 March 2009
DDP 4Gb DDR3 SDRAM
K4B4G0446B
K4B4G0846B
5.0 DDR3 SDRAM Addressing
1Gb
Configuration
256Mb x 4
128Mb x 8
64Mb x 16
# of Bank
8
8
8
Bank Address
BA0 - BA2
BA0 - BA2
BA0 - BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A13
A0 - A13
A0 - A12
Column Address
A0 - A9,A11
A0 - A9
A0 - A9
BC switch on the fly
A12/BC
A12/BC
A12/BC
Page size *1
1 KB
1 KB
2 KB
Note 1 : Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered.
Page size is per bank, calculated as follows:
page size = 2 COLBITS * ORG
÷8
where, COLBITS = the number of column address bits,
ORG = the number of I/O (DQ) bits
2Gb
Configuration
512Mb x 4
256Mb x 8
128Mb x 16
# of Bank
8
8
8
Bank Address
BA0 - BA2
BA0 - BA2
BA0 - BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A14
A0 - A14
A0 - A13
Column Address
A0 - A9,A11
A0 - A9
A0 - A9
BC switch on the fly
A12/BC
A12/BC
A12/BC
Page size *1
1 KB
1 KB
2 KB
4Gb
Configuration
1Gb x 4
512Mb x 8
256Mb x 16
# of Bank
8
8
8
Bank Address
BA0 - BA2
BA0 - BA2
BA0 - BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A15
A0 - A15
A0 - A14
Column Address
A0 - A9,A11
A0 - A9
A0 - A9
BC switch on the fly
A12/BC
A12/BC
A12/BC
Page size *1
1 KB
1 KB
2 KB
8Gb
Configuration
2Gb x 4
1Gb x 8
512Mb x 16
# of Bank
8
8
8
Bank Address
BA0 - BA2
BA0 - BA2
BA0 - BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A15
A0 - A15
A0 - A15
Column Address
A0 - A9,A11,A13
A0 - A9,A11
A0 - A9
BC switch on the fly
A12/BC
A12/BC
A12/BC
Page size *1
2 KB
2 KB
2 KB


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