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Si8241CB-B-IS1 Datasheet(PDF) 10 Page - Silicon Laboratories |
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Si8241CB-B-IS1 Datasheet(HTML) 10 Page - Silicon Laboratories |
10 / 30 page Si824x 10 Rev. 0.2 Table 6. IEC 60747-5-2 Insulation Characteristics* Parameter Symbol Test Condition Characteristic Unit NB SOIC-16 Maximum Working Insulation Voltage VIORM 560 V peak Input to Output Test Voltage VPR Method b1 (VIORM x1.875 =VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 1050 V peak Transient Overvoltage VIOTM t = 60 sec 4000 V peak Pollution Degree (DIN VDE 0110, Table 1) 2 Insulation Resistance at TS, VIO =500 V RS >109 *Note: Maintenance of the safety data is ensured by protective circuits. The Si824x provides a climate classification of 40/125/21. Table 7. IEC Safety Limiting Values1 Parameter Symbol Test Condition NB SOIC-16 Unit Case Temperature TS 150 °C Safety Input Current IS JA = 105 °C/W (NB SOIC-16), VDDI =5.5 V, VDDA =VDDB=24 V, TJ = 150 °C, TA =25°C 50 mA Device Power Dissipation2 PD 1.2 W Notes: 1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 4. 2. The Si82xx is tested with VDDI =5.5 V, VDDA =VDDB =24 V, TJ =150 ºC, CL = 100 pF, input 2 MHz 50% duty cycle square wave. |
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