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ZXCT1107 Datasheet(PDF) 4 Page - Diodes Incorporated

Part No. ZXCT1107
Description  LOW POWER HIGH-SIDE CURRENT MONITORS
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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ZXCT1107 Datasheet(HTML) 4 Page - Diodes Incorporated

 
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ZXCT1107/1109/1110
LOW POWER HIGH-SIDE CURRENT MONITORS
ZXCT1107/1109/1110
Document number: DS35033 Rev. 1 - 2
4 of 17
www.diodes.com
MARCH 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Electrical Characteristics (TA = 25°C, VS+ = 20V, VSENSE
5 = 100mV, R
GAIN = 0 unless otherwise stated) (cont.)
ZXCT1110
Symbol
Parameter
Conditions
TA
Min
Typ
Max
Units
IQ
GND pin current
VSENSE
5 = 0V
25°C
3
5
µA
-40°C
2.2
125°C
5.8
IS-
S- input current
25°C
19
100
nA
-40°C
16
125°C
35
CMSR
Common-Mode Sense rejection
VS+ = 2.5V to 36V
25°C
0.1
0.4
µA/V
-40°C
0.13
125°C
0.05
IOO
Output Offset current
6,7
VSENSE
5 = 10mV
25°C
0
±4
µA
-40°C
-1.8
125°C
+2.5
GT
Transconductance
VSENSE
5 = 10mV to
150mV
25°C
3.928
4
4.072
mA/V
-40°C
3.9
125°C
4.08
GE
Transconductance error
VSENSE
5 = 10mV to
150mV
25°C
-1.8
1.8
%
IOUT GT-TC
Transconductance temp.co
25°C
265
ppm/ºC
VOUTH
Output relative to VS-
25°C
-1
-0.78
V
-40°C
-0.88
125°C
-0.63
BW
-3dB Small Signal Bandwidth
VSENSE
5
(AC) = 10mVPP,
RGAIN = 2.5kΩ
25°C
0.65
MHz
Notes.
5. VSENSE = “VSENSE+” – “VSENSE-
6. Output current characteristic measured with low impedance ammeter connected to GND
7. Defined as difference between actual output current and 40 µA; measured at VSENSE =10mV. This will include an error due to bias
currents of the device.
8. For VSENSE > 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used.


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