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CZTUX87_10 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZTUX87_10
Description  SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZTUX87
SURFACE MOUNT
HIGH VOLTAGE
NPN SILICON POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTUX87 type
is a NPN Silicon Power Transistor epoxy molded in
a surface mount package, designed for high voltage
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCEV
900
V
Collector-Emitter Voltage
VCEO
450
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
0.5
A
Peak Collector Current
ICM
1.0
A
Continuous Base Current
IB
1.0
A
Power Dissipation
PD
2.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=900V, VBE=1.5V
100
µA
ICEV
VCE=900V, VBE=1.5V, TA=125°C
1.0
mA
IEBO
VEB=5.0V
1.0
mA
BVCEO
IC=30mA
450
V
VCE(SAT)
IC=100mA, IB=10mA
0.8
V
VCE(SAT)
IC=200mA, IB=20mA
1.0
V
VBE(SAT)
IC=200mA, IB=20mA
1.0
V
hFE
VCE=5.0V, IC=40mA
12
fT
VCE=10V, IC=50mA, f=1.0MHz
20
MHz
ts
VCC=250V, IC=200mA, IB1=40mA, IB2=80mA
4.5
µs
tf
VCC=250V, IC=200mA, IB1=40mA, IB2=80mA
0.5
µs
SOT-223 CASE
SOT-223 CASE
R3 (1-March 2010)
www.centra lsemi.com




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