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CZT953_10 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT953_10
Description  SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZT953
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT953 type is
a high current PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
5.0
A
Power Dissipation (Note 1)
PD
3.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
41.7
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=100V
50
nA
ICBO
VCB=100V, TA=100°C
1.0
μA
ICER
VCE=100V, RBE≤1.0kΩ
50
nA
IEBO
VEB=6.0V
10
nA
BVCBO
IC=100μA
140
170
V
BVCER
IC=10mA, RBE≤1.0kΩ
140
150
V
BVCEO
IC=10mA
100
120
V
BVEBO
IE=100μA
6.0
9.0
V
VCE(SAT)
IC=100mA, IB=10mA
20
50
mV
VCE(SAT)
IC=1.0A, IB=100mA
90
120
mV
VCE(SAT)
IC=2.0A, IB=200mA
170
220
mV
VCE(SAT)
IC=4.0A, IB=400mA
320
420
mV
VBE(SAT)
IC=4.0A, IB=400mA
1.0
1.2
V
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=1.0A
100
200
300
hFE
VCE=1.0V, IC=3.0A
50
70
hFE
VCE=1.0V, IC=4.0A
30
45
hFE
VCE=1.0V, IC=10A
15
fT
VCE=10V, IC=100mA, f=50MHz
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
45
pF
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R3 (1-March 2010)
www.centra lsemi.com




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